Quantum point contacts and resistive switching in Ni/NiO nanowire junctions
Citation:
Oliver S.M, Fairfield J.A, Bellew A.T, Lee S, Champlain J.G, Ruppalt L.B, Boland J.J, Vora P.M, Quantum point contacts and resistive switching in Ni/NiO nanowire junctions, Applied Physics Letters, 109, 20, 2016, 203101-Download Item:
Abstract:
Metal oxide devices that exhibit resistive swi
tching are leading candidates for non-volatile
memory applications due to their potential for
fast switching, low-power operation, and high
device density. It is widely accepted in many sys
tems that two-state resistive behavior arises
from the formation and rupture of conductive fil
aments spanning the oxide layer. However,
means for controlling the filament geometr
y, which critically influences conduction, have
largely been unexamined. Here, we explore the connection between filament geometry and con-
ductance in a model resistive switching system b
ased on the junction of two nickel/nickel oxide
core/shell nanowires. Variable temperature curr
ent-voltage measurements indicate that either
wide metallic filaments or narrow semiconducti
ng filaments can be preferentially formed by
varying the current compliance during electrofo
rmation. Metallic filaments behave as a conven-
tional metallic resistance in series with a small
barrier, while semiconduc
ting filaments behave
as quantum point contacts. The ability to tune
filament geometry and behavior through the
electroforming process may open avenues for en
hanced functionality in
nanoscale me
mristive
systems
Author's Homepage:
http://people.tcd.ie/jboland
Author: BOLAND, JOHN
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Journal ArticleCollections
Series/Report no:
Applied Physics Letters109
20
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Metal oxide devicesDOI:
http://dx.doi.org/10.1063/1.4967502Metadata
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