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dc.contributor.authorBOLAND, JOHNen
dc.date.accessioned2017-01-17T11:22:01Z
dc.date.available2017-01-17T11:22:01Z
dc.date.issued2016en
dc.date.submitted2016en
dc.identifier.citationOliver S.M, Fairfield J.A, Bellew A.T, Lee S, Champlain J.G, Ruppalt L.B, Boland J.J, Vora P.M, Quantum point contacts and resistive switching in Ni/NiO nanowire junctions, Applied Physics Letters, 109, 20, 2016, 203101-en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/78759
dc.description.abstractMetal oxide devices that exhibit resistive swi tching are leading candidates for non-volatile memory applications due to their potential for fast switching, low-power operation, and high device density. It is widely accepted in many sys tems that two-state resistive behavior arises from the formation and rupture of conductive fil aments spanning the oxide layer. However, means for controlling the filament geometr y, which critically influences conduction, have largely been unexamined. Here, we explore the connection between filament geometry and con- ductance in a model resistive switching system b ased on the junction of two nickel/nickel oxide core/shell nanowires. Variable temperature curr ent-voltage measurements indicate that either wide metallic filaments or narrow semiconducti ng filaments can be preferentially formed by varying the current compliance during electrofo rmation. Metallic filaments behave as a conven- tional metallic resistance in series with a small barrier, while semiconduc ting filaments behave as quantum point contacts. The ability to tune filament geometry and behavior through the electroforming process may open avenues for en hanced functionality in nanoscale me mristive systemsen
dc.description.sponsorshipP.M.V. and S.M.O. acknowledge the support from the Office of Naval Research through Grant No. N-00014-15-1- 2357 and from the GMU Presidential Scholarship Program. J.A.F., A.T.B., S.L., and J.J.B. wish to acknowledge the support from the AMBER Centre and Advanced Microscopy Laboratory, as well as funding from the European Research Council under Advanced Grant No. 321160.en
dc.format.extent203101en
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseries109en
dc.relation.ispartofseries20en
dc.rightsYen
dc.subjectMetal oxide devicesen
dc.subject.lcshMetal oxide devicesen
dc.titleQuantum point contacts and resistive switching in Ni/NiO nanowire junctionsen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jbolanden
dc.identifier.rssinternalid142860en
dc.identifier.doihttp://dx.doi.org/10.1063/1.4967502en
dc.rights.ecaccessrightsopenAccess
dc.identifier.rssurihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84995814313&doi=10.1063%2f1.4967502&partnerID=40&md5=1b0743c3bc7a1a8bfcd2ceb33dd781c7en


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