Band gap engineering of In2O3 by alloying with Tl2O3
Citation:
Scanlon, D.O., Regoutz, A., Egdell, R.G., Morgan, D.J., Watson, G.W., Band gap engineering of In2O3 by alloying with Tl2O3, Applied Physics Letters, 103, 26, 2013, art. no. 262108Download Item:
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Abstract:
Efficient modulation of the bandgap of In
2
O
3
will open up a route to improved electronic properties.
We demonstrate using
ab initio
calculations that Tl incorporation into In
2
O
3
reduces the band gap
and confirm that narrowing of the gap is observed by X-ray photoemission spectroscopy on ceramic
surfaces. Incorporation of Tl does not break the symmetry of the allowed optical transitions, meaning
that the doped thin films should retain optical transparency in the visible region, in combination with
a lowering of the conduction band effective mass. We propose that Tl-doping may be an efficient
way to increase the dopability and carrier mobility of In
2
O
3
Sponsor
Grant Number
Engineering and Physical Sciences Research Council (EPSRC)
EP/F067496
Author's Homepage:
http://people.tcd.ie/watsongDescription:
PUBLISHED
Author: WATSON, GRAEME
Type of material:
Journal ArticleCollections:
Series/Report no:
Applied Physics Letters103
26
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PhysicsDOI:
http://dx.doi.org/10.1063/1.4860986Licences: