Material characterisation of nanowires with intrinsic stress
Citation:
Mills, S., Sader, J.E., Boland, J.J, Material characterisation of nanowires with intrinsic stress, Nanotechnology, 28, 35, 2017Abstract:
When fabricating nanowires in a doubly-clamped beam configuration it is possible for a
residual axial stress to be generated. Here, we show that material characterisation of metal and
semiconductor nanowires subjected to residual axial stress can be problematic. Benchmark
measurements of the Young’s modulus of nanowires are performed by sectioning a doublyclamped nanowire into two cantilevered wires, eliminating residual axial stress. Use of models
for doubly-clamped beams that incorporate the effects of residual stress are found to lead to
ambiguity in the extracted Young’s modulus as a function of displacement fit range, even for
nanowires with no residual stress. This is due to coupling of bending and axial stress effects at
small displacements, and the limited displacement range of force curves prior to fracture or
plastic deformation. This study highlights the importance of fabricating metal and
semiconductor nanowires that exhibit little or no residual axial stress for materials
characterisation.
Author's Homepage:
http://people.tcd.ie/jboland
Author: Boland, John
Type of material:
Journal ArticleCollections
Series/Report no:
Nanotechnology;28;
35;
Availability:
Full text availableKeywords:
Residual stress, doubly-clamped, Nanowires, Young’s modulus, Euler-BernoulliSubject (TCD):
Nanoscience & MaterialsDOI:
http://iopscience.iop.org/article/10.1088/1361-6528/aa7c31Metadata
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