Heterojunction hybrid devices from vapor phase grown MoS 2
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2014Access:
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Yim, C., O'Brien, M., McEvoy, N., (...), Lemme, M.C., Duesberg, G.S., Heterojunction hybrid devices from vapor phase grown MoS 2, Scientific Reports, 4, 2014, 5458-Download Item:
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Abstract:
We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS2) layer transferred onto p-type silicon. The fabrication is scalable as the MoS2 is grown by a controlled and tunable vapor phase sulfurization process. The obtained large-scale p-n heterojunction diodes exhibit notable photoconductivity which can be tuned by modifying the thickness of the MoS2 layer. The diodes have a broad spectral response due to direct and indirect band transitions of the nanoscale MoS2. Further, we observe a blue-shift of the spectral response into the visible range. The results are a significant step towards scalable fabrication of vertical devices from two-dimensional materials and constitute a new paradigm for materials engineering.
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Grant Number
Science Foundation Ireland (SFI)
12/RC/2278
Science Foundation Ireland (SFI)
PI_10/IN.1/I3030.
Author's Homepage:
http://people.tcd.ie/duesberghttp://people.tcd.ie/mcevoyni
http://people.tcd.ie/yimc
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Scientific Reports4
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ChemistryDOI:
http://dx.doi.org/10.1038/srep05458Licences: