Electrical Properties of High-k Ta205 Gate Dielectrics on Strained Ge-rich Layers
Citation:S. Chakraborty, S.K. Samanta, S. Bhattacharya, J. McCarthy, B.M. Armstrong, H.S. Gamble, G.K. Dalapati, S. Das, T. Perova, R.A. Moore and C.K. Maiti `Electrical Properties of High-k Ta205 Gate Dielectrics on Strained Ge-rich Layers? in proceedings of the IEEE 24th International Conference on Microelectronics (MIEL-2004), NIS, Serbia and Montenegro, 16-19 May, 24, (2), 2004, pp 405 - 407
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The electrical properties of ultrathin high-k Zr02 gate dielectric films dcposited on strained Gc-rich layers using microwave plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature (150'C) have been studied. The strained Ge-rich heterolaycrs have been analyzed by transmission elcctron microscopy (TEM) and Raman spectra. X-ray photoclectron spectroscopy (XPS) has been used for analysis of chemical compositions of the deposited 2102 films. The fixed oxide charge density (Qdq) and interface state density (D;,) are found to be 4.8 x 10" cm~ 2an d 5 . 1 ~ 1 0 e' ~V -'mi2, respectively. The capacitance-voltage (C-V) characteristics and current-voltage (I-V) characteristics before and after constant current stressing exhibit good electrical properties and thus indicate the suitability of these films for future microelectronic applications.
Type of material:Conference Paper
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Keywords:Mechanical and Manufacturing Engineering