Browsing Physics (Scholarly Publications) by Author "FENG, GEN"
Now showing items 1-6 of 6
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Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage
FENG, GEN; FENG, JIA-FENG; VAN, DIJKEN SEBASTIAN; COEY, JOHN MICHAEL DAVID (American Institute of Physics, 2009)Co40Fe40B20/MgO single and double barrier magnetic tunnel junctions (MTJs) were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co40Fe40B20 ferromagnetic electrodes. ... -
Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions
FENG, GEN; FENG, JIA-FENG; COEY, JOHN MICHAEL DAVID (Elsevier, 2009)MgO-based magnetic tunnel junctions (MTJs) with a layer sequence Ir22Mn78 or Fe50Mn50 (10 nm)/CoFe (2 nm)/Ru (0.85 nm)/CoFeB (0.5t<2 nm)/MgO (2.5 nm)/CoFeB (3 nm) have been fabricated. The bias voltage dependence of tunneling ... -
Influence of annealing on the bias voltage dependence of tunnelling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes
FENG, GEN; VAN DIJKEN, SEBASTIAN; COEY, JOHN MICHAEL DAVID (American Institute of Physics, 2006)Double-barrier magnetic tunnel junctions with two MgO barriers and three CoFeB layers exhibiting tunneling magnetoresistance (TMR) values of more than 100% were fabricated. The bias voltage dependence of the TMR ratio is ... -
Magnetoresistance in magnetic tunnel junctions with amorphous electrodes
FENG, GEN; COEY, JOHN MICHAEL DAVID (IEEE, 2005)Magnetic tunnel junctions (MTJs) with amorphous CoFeB and Co2MnSi electrodes were fabricated and examined. In the case of [Co90Fe10]100 B , the = 32%boron addition reduces the magnetization by 30% compared to Co90Fe10, ... -
MgO-based double barrier magnetic tunnel junctions with thin free layers
FENG, GEN; VAN, DIJKEN SEBASTIAN; COEY, JOHN MICHAEL DAVID (American Institute of Physics, 2009)The free layer thickness (tfree) in double barrier magnetic tunnel junctions (DMTJs) based on crystalline MgO barriers and CoFeB ferromagnetic layers has been varied from 0.5 to 3.0 nm in order to investigate its effect ... -
Noise in MgO barrier magnetic tunnel junctions with CoFeB electrodes; influence of annealing temperature
FENG, GEN; COEY, JOHN MICHAEL DAVID (American Institute of Physics, 2007)Low frequency noise has been measured in magnetic tunnel junctions with MgO barriers and magnetoresistance values up to 235%. The authors investigated the noise for different degrees of crystallization and CoFeB/MgO ...