Noise in MgO barrier magnetic tunnel junctions with CoFeB electrodes; influence of annealing temperature
COEY, JOHN MICHAEL DAVID
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Citation:J. Scola, H Polovy, C. Fermon, M. Pannetier-Lecoeur, G. Feng, K. Fahy and J. M. D. Coey 'Noise in MgO barrier magnetic tunnel junctions with CoFeB electrodes; influence of annealing temperature' in Applied Physics Letters, 90, (25), 2007, 252501
Low frequency noise has been measured in magnetic tunnel junctions with MgO barriers and magnetoresistance values up to 235%. The authors investigated the noise for different degrees of crystallization and CoFeB/MgO interface quality depending on the annealing temperature. The authors report an extremely low 1/ f noise, compared to magnetic junctions with Al2O3 barriers. The origin of the low frequency noise is discussed and it is attributed to localized charge traps with the MgO barriers.
Publisher:American Institute of Physics
Series/Report no:Applied Physics Letters