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Dispersion monitoring for high-speed WDM networks via two-photon absorption in a semiconductor microcavity
(2006)Due to the continued demand for bandwidth, network operators have to increase the data rates at which individual wavelengths operate at. As these data rates will exceed 100 Gbit/s in the next 5-10 years, it will be crucial ... -
Impact on structural, optical and electrical properties of CuCl by incorporation of Zn for n-type doping
(2006)γ-CuCl is a wide-band gap (Eg = 3.395eV at 4 K) , direct band gap, semiconductor material with a cubic zincblende lattice structure. A very large exciton binding energy (190 meV), assures efficient exciton-based emission ... -
Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications
(2007)The use of co-evaporation of ZnCl2 with CuCl in order to achieve n-type conductivity in CuCl is reported herein. Linear current–voltage (IV) characteristics in the range of ±4 V have been measured using Cu–Au electrical ... -
Encapsulation of the heteroepitaxial growth of wide band gap γ-CuCl on silicon substrates
(2006)γ-CuCl semiconductor material has been identified as a candidate material for the fabrication of blue-UV optoelectronic devices on Si substrates due to its outstanding electronic, lattice and optical properties. However, ...
