Magnetoresistance in magnetic tunnel junctions with amorphous electrodes
Citation:Nakajima K, Feng G, Coey JMD in 'Magnetoresistance in magnetic tunnel junctions with amorphous electrodes' in IEEE Transactions on Magnetics, 41, (10), 2005, pp 2609 - 2611
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Magnetic tunnel junctions (MTJs) with amorphous CoFeB and Co2MnSi electrodes were fabricated and examined. In the case of [Co90Fe10]100 B , the = 32%boron addition reduces the magnetization by 30% compared to Co90Fe10, yet the reduction of the tunnel magnetoresistance (TMR) is over 95%. On the contrary, in the case of Co(100 )Mn Si , although net magnetization is very small at room temperature, the TMR can be as large as 7%. The character of each metalloid (boron and silicon) could be responsible for the peculiar behavior to each system.
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Type of material:Journal Article
Series/Report no:IEEE Transactions on Magnetics
Availability:Full text available