Electron paramagnetic resonance characterisation of defects in HfO2 and ZrO2 powders and films
Citation:
Sandra Wright, 'Electron paramagnetic resonance characterisation of defects in HfO2 and ZrO2 powders and films', [thesis], Trinity College (Dublin, Ireland). School of Physics, 2009, pp 228Download Item:
Abstract:
Electron Paramagnetic Resonance (EFR) measurements have been made
on a variety of commercially available samples of monoclinic HfO2 and ZrO2
powders and also on HfO2 and ZrO2 films deposited on silicon by electron beam
evaporation. The high dielectric constant of HfO2 and ZrO2 is one of the reasons
that they are being considered as a replacement for SiO2 as a gate dielectric in Si
CMOS devices. The aim of this study is to characterise the defects in HfO2 and
ZrO2 , to determine if the defects trap charge and to determine if the defects will
affect device performance. All EPR spectra were taken at a microwave frequency
of about 9.5GHz and at room temperature.
Author: Wright, Sandra
Advisor:
Barklie, RobertQualification name:
Doctor of Philosophy (Ph.D.)Publisher:
Trinity College (Dublin, Ireland). School of PhysicsNote:
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Full text availableKeywords:
Physics, Ph.D., Ph.D. Trinity College Dublin.Metadata
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