Contact-resistivity and transport properties in lateral germanium nanowire devices
Citation:Maria M. Koleśnik, 'Contact-resistivity and transport properties in lateral germanium nanowire devices', [thesis], Trinity College (Dublin, Ireland). School of Physics, 2013, pp 191
Kolesnik TCD THESIS 9976 Contact resistivity and.pdf (PDF) 83.89Mb
Quasi-one-dimensional materials, such as germanium nanowires, are anticipated to provide enhanced functionality for high-tech electronic and spin- tronic device components. The primary aim of this thesis is to study the contact-resistivity and transport effects effects associated with the quasi-one- dimensional confinement and doping in lateral side-contacted Ge nanowire devices by electrical probing. In addition, a case study is carried out on Ag (metallic) nanowires in order to distinguish universal nanoscale contact- and transport-effects.
Author: Koleśnik, Maria M.
Publisher:Trinity College (Dublin, Ireland). School of Physics
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Type of material:thesis
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