Contact-resistivity and transport properties in lateral germanium nanowire devices
Citation:
Maria M. Koleśnik, 'Contact-resistivity and transport properties in lateral germanium nanowire devices', [thesis], Trinity College (Dublin, Ireland). School of Physics, 2013, pp 191Abstract:
Quasi-one-dimensional materials, such as germanium nanowires, are anticipated to provide enhanced functionality for high-tech electronic and spin- tronic device components. The primary aim of this thesis is to study the contact-resistivity and transport effects effects associated with the quasi-one- dimensional confinement and doping in lateral side-contacted Ge nanowire devices by electrical probing. In addition, a case study is carried out on Ag (metallic) nanowires in order to distinguish universal nanoscale contact- and transport-effects.
Author: Koleśnik, Maria M.
Advisor:
Krstić, VojislaveQualification name:
Doctor of Philosophy (Ph.D.)Publisher:
Trinity College (Dublin, Ireland). School of PhysicsNote:
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Full text availableKeywords:
Physics, Ph.D., Ph.D. Trinity College DublinMetadata
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