Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes
Citation:
O'Dowd, J, Guo, WH, Lynch, M, Flood, E, Bradley, AL, Donegan, JF, Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes, ELECTRONICS LETTERS, 46, 12, 2010, 854 - 856Download Item:
Abstract:
A simple formula is obtained that very accurately describes the level of two-photon absorption (TPA) generated by elliptically polarised light in silicon avalanche photodiodes (Si-APDs). The dichroism parameter necessary to describe the polarisation dependence of TPA in Si-APDs at room temperature is determined to be +0.372 in the region of 1550 nm.
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Grant Number
Science Foundation Ireland (SFI)
Author's Homepage:
http://people.tcd.ie/jdoneganhttp://people.tcd.ie/bradlel
Description:
PUBLISHED
Author: Donegan, John; Bradley, Louise
Type of material:
Journal ArticleCollections
Series/Report no:
ELECTRONICS LETTERS46
12
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Full text availableKeywords:
Physics, PhotocurrentSubject (TCD):
Nanoscience & MaterialsDOI:
http://dx.doi.org/10.1049/el.2010.3090Metadata
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