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dc.contributor.authorDonegan, Johnen
dc.contributor.authorBradley, Louiseen
dc.date.accessioned2010-08-09T11:26:32Z
dc.date.available2010-08-09T11:26:32Z
dc.date.issued2010en
dc.date.submitted2010en
dc.identifier.citationO'Dowd, J, Guo, WH, Lynch, M, Flood, E, Bradley, AL, Donegan, JF, Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes, ELECTRONICS LETTERS, 46, 12, 2010, 854 - 856en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/40410
dc.descriptionPUBLISHEDen
dc.description.abstractA simple formula is obtained that very accurately describes the level of two-photon absorption (TPA) generated by elliptically polarised light in silicon avalanche photodiodes (Si-APDs). The dichroism parameter necessary to describe the polarisation dependence of TPA in Si-APDs at room temperature is determined to be +0.372 in the region of 1550 nm.en
dc.format.extent854 - 856en
dc.language.isoenen
dc.relation.ispartofseriesELECTRONICS LETTERSen
dc.relation.ispartofseries46en
dc.relation.ispartofseries12en
dc.rightsYen
dc.subjectPhysicsen
dc.subjectPhotocurrenten
dc.titleDescription of polarisation dependence of two-photon absorption in silicon avalanche photodiodesen
dc.typeJournal Articleen
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jdoneganen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/bradlelen
dc.identifier.rssinternalid67923en
dc.identifier.doihttp://dx.doi.org/10.1049/el.2010.3090en
dc.subject.TCDThemeNanoscience & Materialsen
dc.identifier.rssurihttp://dx.doi.org/10.1049/el.2010.3090en
dc.identifier.orcid_id0000-0002-5240-1434en


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