dc.contributor.author | FERREIRA, MAURO | en |
dc.date.accessioned | 2010-07-13T14:00:25Z | |
dc.date.available | 2010-07-13T14:00:25Z | |
dc.date.issued | 2010 | en |
dc.date.submitted | 2010 | en |
dc.identifier.citation | F. S. M. Guimarães, A. T. Costa, R. B. Muniz and M. S. Ferreira,, Graphene-based spin-pumping transistor, Physical Review B, 81, 2010, 233402 | en |
dc.identifier.other | Y | en |
dc.identifier.uri | http://hdl.handle.net/2262/40273 | |
dc.description | PUBLISHED | en |
dc.description.abstract | We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable
transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent
magnetizations, which exists in the absence of net charge currents. Furthermore, we propose as a proof of
concept how these spin currents can be modulated by an electrostatic gate. Because our proposal involves
nanosized systems that function with very high speeds and in the absence of any applied bias, it is potentially
useful for the development of transistors capable of combining large processing speeds, enhanced integration,
and extremely low-power consumption. | en |
dc.format.extent | 233402 | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Physical Review B | en |
dc.relation.ispartofseries | 81 | en |
dc.rights | Y | en |
dc.subject | Physics | en |
dc.subject | electrostatic gate | en |
dc.subject.lcsh | electrostatic gate | en |
dc.title | Graphene-based spin-pumping transistor | en |
dc.type | Journal Article | en |
dc.type.supercollection | scholarly_publications | en |
dc.type.supercollection | refereed_publications | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/ferreirm | en |
dc.identifier.rssinternalid | 66808 | en |
dc.subject.TCDTheme | Nanoscience & Materials | en |
dc.identifier.rssuri | http://dx.doi.org/10.1103/PhysRevB.81.233402 | en |