Graphene-based spin-pumping transistor
Citation:
F. S. M. Guimarães, A. T. Costa, R. B. Muniz and M. S. Ferreira,, Graphene-based spin-pumping transistor, Physical Review B, 81, 2010, 233402Download Item:
Graphene-based spin-pumping transistor.pdf (Published (publisher's copy) - Peer Reviewed) 185.0Kb
Abstract:
We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable
transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent
magnetizations, which exists in the absence of net charge currents. Furthermore, we propose as a proof of
concept how these spin currents can be modulated by an electrostatic gate. Because our proposal involves
nanosized systems that function with very high speeds and in the absence of any applied bias, it is potentially
useful for the development of transistors capable of combining large processing speeds, enhanced integration,
and extremely low-power consumption.
Author's Homepage:
http://people.tcd.ie/ferreirmDescription:
PUBLISHED
Author: FERREIRA, MAURO
Type of material:
Journal ArticleCollections:
Series/Report no:
Physical Review B81
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Full text availableKeywords:
Physics, electrostatic gateSubject (TCD):
Nanoscience & MaterialsLicences: