Spectroscopical analyis of strained silicon quantum wells
Citation:
J. McCarthy and E. Ni Mhuircheartaigh, K. Lyutovich and M. Oehme, T. S. Perova, R. A. Moore, and W. Blau, Spectroscopical analyis of strained silicon quantum wells, SPIE--The International Society for Optical Engineering., Opto-Ireland 2005: Nanotechnology and Nanophotonics, Dublin, Ireland, Werner J. Blau, David Kennedy, John Colreavy, 5824, SPIE, 2005, 174Download Item:
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Abstract:
In this study, Strained silicon Quantum Wells (QW) were characterised using a variety of micro-scopical techniques.
Among the techniques used were Transmission Electron Microscopy (TEM), Elemental Electron Loss Spectroscopy
(EELS), and micro-Raman spectroscopy. A combination of these methods facilitates investigation of the structure, the
strain, and the dislocations present in such materials. Both conventional and High Resolution Transmission Electron
Microscopy (HRTEM) are used to analyse strained silicon quantum wells (QW). These techniques allow for structure
analysis at the atomic level. Elemental Electron Loss Spectroscopy (EELS) is used in tandem with other analytical
techniques in order to give a quantitative analysis of the structures. The presence of various layers is independently
verified using EELS, while layer depth and concentration profiles are also established. Relaxation levels in the virtual
substrate as well as the strain in Si quantum wells are calculated using Raman spectroscopy.
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Grant Number
Higher Education Authority (HEA)
Author's Homepage:
http://people.tcd.ie/perovathttp://people.tcd.ie/wblau
http://people.tcd.ie/rmoore
Description:
PUBLISHEDDublin, Ireland
Other Titles:
SPIE--The International Society for Optical Engineering.Opto-Ireland 2005: Nanotechnology and Nanophotonics
Publisher:
SPIEType of material:
PosterSeries/Report no:
5824Availability:
Full text availableKeywords:
Silicon Quantum Wells, TEM, EELS, Raman spectroscopyDOI:
http://dx.doi.org/10.1117/12.606601Licences: