Analysis of Strain and Intermixing in a Single Layer Ge/Si dots using polarized Raman Spectroscopy
Citation:
A.V. Baranov, A.V. Fedorov, T.S. Perova and R.A. Moore, V. Yam, D. Bouchier, V. Le Thanh, K. Berwick,, Analysis of Strain and Intermixing in a Single Layer Ge/Si dots using polarized Raman Spectroscopy, Physical Review B, 73, 7, 2006, 075322/1, 075322/6Download Item:
Analysis of strain.pdf (Published (publisher's copy) - Peer Reviewed) 285.6Kb
Abstract:
The built-in strain and composition of as-grown and Si-capped single layers of Ge?Si dots grown at various temperatures (460?800 ?C) are studied by a comparative analysis of the Ge-Ge and Si-Ge modes in the polarized Raman spectra of the dots. A pronounced reduction of the strain and Ge content in the dots after deposition of the cap layer at low temperatures is observed, indicating that strain-induced Si diffusion from the cap layer is occurring. For large dots grown at 700?800 ?C the observations are in agreement with a model of the Ge?Si dot consisting of a Si-rich boundary region and a Ge-rich core.
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http://people.tcd.ie/perovathttp://people.tcd.ie/rmoore
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PUBLISHED
Author: PEROVA, TANIA; MOORE, ROBERT
Type of material:
Journal ArticleSeries/Report no:
Physical Review B73
7
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Mechanical and Manufacturing EngineeringDOI:
http://dx.doi.org/10.1103/PhysRevB.73.075322Licences: