Determination of substitutional carbon content in rapid thermal chemical vapour deposited Si1-x-yGexCy on Si (1 0 0) using Raman spectroscopy
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Joanna Wasyluk, Tatiana S. Perova and Francoise Meyer `Determination of substitutional carbon content in rapid thermal chemical vapour deposited Si1-x-yGexCy on Si (1 0 0) using Raman spectroscopy? in Thin Solid Films, 2009Download Item:
Abstract:
The effect of carbon content on strain compensation in rapid thermal chemical vapour deposited Si1-x-yGexCy films was investigated using Raman spectroscopy as x varies from 10% to 16% and y varies from 0% to 1.8%. The dependence of the Raman intensities of the carbon local modes and the Si-Si modes versus carbon content was analysed. A linear dependence has been revealed for the integrated and peak intensities of these vibrational modes versus C content for samples with x ? 16%. This shows that Raman scattering measurements can be utilised for determination of the substitutional carbon content in SiGeC layers with a Ge content up to 16%.
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Irish Research Council for Science Engineering and Technology
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http://people.tcd.ie/perovatDescription:
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Author: PEROVA, TANIA
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Thin Solid FilmsAvailability:
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