dc.contributor.author | COEY, JOHN | en |
dc.contributor.author | STAMENOV, PLAMEN | en |
dc.contributor.author | RODE, KARSTEN | en |
dc.date.accessioned | 2017-01-16T12:05:17Z | |
dc.date.available | 2017-01-16T12:05:17Z | |
dc.date.issued | 2016 | en |
dc.date.submitted | 2016 | en |
dc.identifier.citation | Borisov K, Betto D, Lau Y.-C, Fowley C, Titova A, Thiyagarajah N, Atcheson G, Lindner J, Deac A.M, Coey J.M.D, Stamenov P, Rode K, Tunnelling magnetoresistance of the half-metallic compensated ferrimagnet Mn<inf>2</inf>Ru<inf>x</inf>Ga, Applied Physics Letters, 108, 19, 2016, 192407- | en |
dc.identifier.other | Y | en |
dc.identifier.uri | http://hdl.handle.net/2262/78746 | |
dc.description | PUBLISHED | en |
dc.description | Cited By :2 Export Date: 13 January 2017 | en |
dc.description.abstract | Tunnel magnetoresistance ratios of up to 40% ar
e measured between 10 K and 300 K when the highly
spin-polarized compensated ferrimagnet, Mn
2
Ru
x
Ga, is integrated into MgO-based perpendicular
magnetic tunnel junctions. Temperature and bias depen
dences of the tunnel magnetoresistance effect,
with a sign change near
0.2 V, reflect the structure of the Mn
2
Ru
x
Ga interface density of states.
Despite magnetic moment vanishing at a
compensation temperature of 200 K for
x
0
:
8, the tunnel
magnetoresistance ratio remains non-zero throughout the compensation region, demonstrating that the
spin-transport is governed by one of the Mn sub-la
ttices only. Broad temperature range magnetic field
immunity of at least 0.5 T is demonstrated in the sa
me sample. The high spin polarization and perpen-
dicular magnetic anisotropy make Mn
2
Ru
x
Ga suitable for applications
in both non-volatile magnetic
random access memory cells and terahertz spin-transfer oscillators | en |
dc.description.sponsorship | K.B. and P.S. acknowledge financial support from Science
Foundation Ireland (SFI) within SSPP (11/SIRG/I2130). K.B.,
D.B., Y.C.L., J.M.D.C., P.S., and K.R. were supported by SFI
through AMBER, and from Grant No. 13/ERC/I2561. D.B.
acknowledges support from IRCSET. A.T. acknowledges
support from the Helmholtz-
Zentrum Dresden-Rossendorf
Summer student program. C
.F. and A.M.D. acknowledge
support from the Helmholtz Young
Investigator Initiative Grant
No. VH-N6-1048. Support by the
Nanofabrication Facilities
Rossendorf at Ion Beam Center is gratefully acknowledged. | en |
dc.format.extent | 192407 | en |
dc.relation.ispartofseries | Applied Physics Letters | en |
dc.relation.ispartofseries | 108 | en |
dc.relation.ispartofseries | 19 | en |
dc.rights | Y | en |
dc.subject | Tunnel magnetoresistance ratios | en |
dc.subject.lcsh | Tunnel magnetoresistance ratios | en |
dc.title | Tunnelling magnetoresistance of the half-metallic compensated ferrimagnet Mn<inf>2</inf>Ru<inf>x</inf>Ga | en |
dc.type | Journal Article | en |
dc.type.supercollection | scholarly_publications | en |
dc.type.supercollection | refereed_publications | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/jcoey | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/stamenp | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/rodek | en |
dc.identifier.rssinternalid | 142891 | en |
dc.identifier.doi | http://dx.doi.org/10.1063/1.4948934 | en |
dc.rights.ecaccessrights | openAccess | |
dc.identifier.rssuri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84971246251&doi=10.1063%2f1.4948934&partnerID=40&md5=f3d813b9c6e4c5384b482b4d1bd5acde | en |
dc.identifier.orcid_id | 0000-0003-0053-8452 | en |
dc.contributor.sponsor | Science Foundation Ireland (SFI) | en |
dc.contributor.sponsorGrantNumber | 3/ERC/I256 | en |
dc.contributor.sponsor | Science Foundation Ireland (SFI) | en |
dc.contributor.sponsorGrantNumber | 11/SIRG/I2130 | en |