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dc.contributor.authorCOEY, JOHNen
dc.contributor.authorSTAMENOV, PLAMENen
dc.contributor.authorRODE, KARSTENen
dc.date.accessioned2017-01-16T12:05:17Z
dc.date.available2017-01-16T12:05:17Z
dc.date.issued2016en
dc.date.submitted2016en
dc.identifier.citationBorisov K, Betto D, Lau Y.-C, Fowley C, Titova A, Thiyagarajah N, Atcheson G, Lindner J, Deac A.M, Coey J.M.D, Stamenov P, Rode K, Tunnelling magnetoresistance of the half-metallic compensated ferrimagnet Mn<inf>2</inf>Ru<inf>x</inf>Ga, Applied Physics Letters, 108, 19, 2016, 192407-en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/78746
dc.descriptionPUBLISHEDen
dc.descriptionCited By :2 Export Date: 13 January 2017en
dc.description.abstractTunnel magnetoresistance ratios of up to 40% ar e measured between 10 K and 300 K when the highly spin-polarized compensated ferrimagnet, Mn 2 Ru x Ga, is integrated into MgO-based perpendicular magnetic tunnel junctions. Temperature and bias depen dences of the tunnel magnetoresistance effect, with a sign change near 0.2 V, reflect the structure of the Mn 2 Ru x Ga interface density of states. Despite magnetic moment vanishing at a compensation temperature of 200 K for x 0 : 8, the tunnel magnetoresistance ratio remains non-zero throughout the compensation region, demonstrating that the spin-transport is governed by one of the Mn sub-la ttices only. Broad temperature range magnetic field immunity of at least 0.5 T is demonstrated in the sa me sample. The high spin polarization and perpen- dicular magnetic anisotropy make Mn 2 Ru x Ga suitable for applications in both non-volatile magnetic random access memory cells and terahertz spin-transfer oscillatorsen
dc.description.sponsorshipK.B. and P.S. acknowledge financial support from Science Foundation Ireland (SFI) within SSPP (11/SIRG/I2130). K.B., D.B., Y.C.L., J.M.D.C., P.S., and K.R. were supported by SFI through AMBER, and from Grant No. 13/ERC/I2561. D.B. acknowledges support from IRCSET. A.T. acknowledges support from the Helmholtz- Zentrum Dresden-Rossendorf Summer student program. C .F. and A.M.D. acknowledge support from the Helmholtz Young Investigator Initiative Grant No. VH-N6-1048. Support by the Nanofabrication Facilities Rossendorf at Ion Beam Center is gratefully acknowledged.en
dc.format.extent192407en
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseries108en
dc.relation.ispartofseries19en
dc.rightsYen
dc.subjectTunnel magnetoresistance ratiosen
dc.subject.lcshTunnel magnetoresistance ratiosen
dc.titleTunnelling magnetoresistance of the half-metallic compensated ferrimagnet Mn<inf>2</inf>Ru<inf>x</inf>Gaen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jcoeyen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/stamenpen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/rodeken
dc.identifier.rssinternalid142891en
dc.identifier.doihttp://dx.doi.org/10.1063/1.4948934en
dc.rights.ecaccessrightsopenAccess
dc.identifier.rssurihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84971246251&doi=10.1063%2f1.4948934&partnerID=40&md5=f3d813b9c6e4c5384b482b4d1bd5acdeen
dc.identifier.orcid_id0000-0003-0053-8452en
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.contributor.sponsorGrantNumber3/ERC/I256en
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.contributor.sponsorGrantNumber11/SIRG/I2130en


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