Tunnelling magnetoresistance of the half-metallic compensated ferrimagnet Mn<inf>2</inf>Ru<inf>x</inf>Ga
File Type:
PDFItem Type:
Journal ArticleDate:
2016Access:
openAccessCitation:
Borisov K, Betto D, Lau Y.-C, Fowley C, Titova A, Thiyagarajah N, Atcheson G, Lindner J, Deac A.M, Coey J.M.D, Stamenov P, Rode K, Tunnelling magnetoresistance of the half-metallic compensated ferrimagnet Mn<inf>2</inf>Ru<inf>x</inf>Ga, Applied Physics Letters, 108, 19, 2016, 192407-Download Item:
1%2E4948934.pdf (PDF) 3.388Mb
Abstract:
Tunnel magnetoresistance ratios of up to 40% ar
e measured between 10 K and 300 K when the highly
spin-polarized compensated ferrimagnet, Mn
2
Ru
x
Ga, is integrated into MgO-based perpendicular
magnetic tunnel junctions. Temperature and bias depen
dences of the tunnel magnetoresistance effect,
with a sign change near
0.2 V, reflect the structure of the Mn
2
Ru
x
Ga interface density of states.
Despite magnetic moment vanishing at a
compensation temperature of 200 K for
x
0
:
8, the tunnel
magnetoresistance ratio remains non-zero throughout the compensation region, demonstrating that the
spin-transport is governed by one of the Mn sub-la
ttices only. Broad temperature range magnetic field
immunity of at least 0.5 T is demonstrated in the sa
me sample. The high spin polarization and perpen-
dicular magnetic anisotropy make Mn
2
Ru
x
Ga suitable for applications
in both non-volatile magnetic
random access memory cells and terahertz spin-transfer oscillators
Sponsor
Grant Number
Science Foundation Ireland (SFI)
3/ERC/I256
Science Foundation Ireland (SFI)
11/SIRG/I2130
Author's Homepage:
http://people.tcd.ie/jcoeyhttp://people.tcd.ie/stamenp
http://people.tcd.ie/rodek
Description:
PUBLISHEDCited By :2 Export Date: 13 January 2017
Type of material:
Journal ArticleCollections:
Series/Report no:
Applied Physics Letters108
19
Availability:
Full text availableKeywords:
Tunnel magnetoresistance ratiosDOI:
http://dx.doi.org/10.1063/1.4948934Licences: