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dc.contributor.authorFENG, GEN
dc.contributor.authorCOEY, JOHN MICHAEL DAVID
dc.date.accessioned2009-08-20T15:24:45Z
dc.date.available2009-08-20T15:24:45Z
dc.date.issued2005
dc.date.submitted2005en
dc.identifier.citationNakajima K, Feng G, Coey JMD in 'Magnetoresistance in magnetic tunnel junctions with amorphous electrodes' in IEEE Transactions on Magnetics, 41, (10), 2005, pp 2609 - 2611en
dc.identifier.otherYen
dc.identifier.otherY
dc.identifier.urihttp://hdl.handle.net/2262/31852
dc.descriptionPUBLISHEDen
dc.description.abstractMagnetic tunnel junctions (MTJs) with amorphous CoFeB and Co2MnSi electrodes were fabricated and examined. In the case of [Co90Fe10]100 B , the = 32%boron addition reduces the magnetization by 30% compared to Co90Fe10, yet the reduction of the tunnel magnetoresistance (TMR) is over 95%. On the contrary, in the case of Co(100 )Mn Si , although net magnetization is very small at room temperature, the TMR can be as large as 7%. The character of each metalloid (boron and silicon) could be responsible for the peculiar behavior to each system.en
dc.description.sponsorshipThis work was supported by the CINSE project, Science Foundation of Ireland (SFI).en
dc.format.extent2609en
dc.format.extent2611en
dc.format.extent155418 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherIEEEen
dc.relation.ispartofseriesIEEE Transactions on Magneticsen
dc.relation.ispartofseries41en
dc.relation.ispartofseries10en
dc.rightsYen
dc.subjectAmorphous, MTJ, spin-dependent tunneling.en
dc.titleMagnetoresistance in magnetic tunnel junctions with amorphous electrodesen
dc.typeJournal Articleen
dc.contributor.sponsorScience Foundation Ireland
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jcoey
dc.identifier.rssinternalid37111
dc.identifier.rssurihttp://dx.doi.org/10.1109/TMAG.2005.854717


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