Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires
Item Type:Journal Article
Citation:Wang, J. and Cuccureddu, F. and Ramos, R. and Coileain, C.O. and Shvets, I.V. and Wu, H.-C., Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires, SPIN, 9, 1, 2019
magnetoresistance-of-nanoscale-domain.pdf (Accepted for publication (author's copy) - Peer Reviewed) 898.9Kb
We present the possibility of enhancing magnetoresistance by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on the micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on c-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature.
Author: Shvets, Igor
Type of material:Journal Article
Availability:Full text available