Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires
Citation:
Wang, J. and Cuccureddu, F. and Ramos, R. and Coileain, C.O. and Shvets, I.V. and Wu, H.-C., Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires, SPIN, 9, 1, 2019Abstract:
We present the possibility of enhancing magnetoresistance by controlling nanoscale domain wall (DW)
width in a planar nanowire array. Results based on the micromagnetic calculations show that DW width
decreases with increasing exchange bias field and decreases with reducing exchange interaction between
neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on c-plane sapphire to demonstrate the
feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature.
Author's Homepage:
http://people.tcd.ie/caffredahttp://people.tcd.ie/ivchvets
Author: Shvets, Igor
Type of material:
Journal ArticleCollections
Series/Report no:
SPIN;9;
1;
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Full text availableKeywords:
Magnetoresistance, Nanowire arraysDOI:
http://dx.doi.org/10.1142/S2010324719500048Metadata
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