Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications
Citation:
O'Reilly, L., Mitra, A., Lucas, O.F., Natarajan, G., McNally, P.J., Daniels, S., Lankinen, A., Lowney, D., Bradley, A.L., Cameron, D.C., Characterisation of n-type γ-CuCl on Si for UV optoelectronic applications, Journal of Materials Science: Materials in Electronics, 2007, 18, 1, S57 - S60Download Item:
Abstract:
The use of co-evaporation of ZnCl2 with CuCl in order to achieve n-type conductivity in CuCl is reported herein. Linear current–voltage (IV) characteristics in the range of ±4 V have been measured using Cu–Au electrical contacts. Room temperature Hall effect measurements show some evidence of a mixed conduction mechanism. On average the samples exhibit n-type conductivity with a bulk electron carrier concentration n ∼1 × 1016 cm−3 and Hall mobility μ ∼ 29 cm2v−1s−1 for a CuCl sample doped with a nominal 3 mole % ZnCl2. By use of an in situ CaF2 capping layer, transmission >90% is achieved. At room temperature a strong Z3 free excitonic emission occurs at ∼385 nm using both photoluminescence and x-ray excited optical luminescence, indicating the high optical quality of the doped material.
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http://people.tcd.ie/bradlelDescription:
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Author: Bradley, Louise
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Journal of Materials Science: Materials in Electronics;18;
1;
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Optoelectronics, SemiconductorsDOI:
http://dx.doi.org/10.1007/s10854-007-9173-0Metadata
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