Novel design for noise controlled semiconductor optical amplifier
Citation:
Philippe, S., Surre, F., Carney, K., Lennox, R. , Bradley, A.L., Landais, P., Novel design for noise controlled semiconductor optical amplifier, Proceedings of the 11th International Conference on Transparent Optical Networks, 11th International Conference on Transparent Optical Networks, Azores, June 2009, 1 & 2, 1-4Download Item:
ICTON_2009_author_copy.pdf (Accepted for publication (author's copy) - Peer Reviewed) 188.2Kb
Abstract:
The use of semiconductor optical amplifiers (SOA) in optical communications networks has so far been limited due to their inherent large noise figure (NF) compared to Erbium Doped Fibre Amplifiers. Therefore improvement of the noise performance of SOAs is critical to their widespread adoption in future networks. We propose to reduce the NF of the SOA by introducing a lasing cavity lateral to the axis of amplification of the device. The carrier density within the cavity is clamped at the lasing threshold. It is thus possible to engineer the carrier density distribution along the active waveguide by controlling the cavity design. According to our simulations, some of the cavity designs lead to a reduction of the noise figure in this novel SOA.
Sponsor
Grant Number
Enterprise Ireland
Author's Homepage:
http://people.tcd.ie/bradlel
Author: Bradley, Louise
Other Titles:
Proceedings of the 11th International Conference on Transparent Optical Networks11th International Conference on Transparent Optical Networks
Type of material:
Conference PaperCollections:
Series/Report no:
1 & 2;Availability:
Full text availableKeywords:
Optical design, Optical noise, Semiconductor device noise, Optical control, Semiconductor optical amplifiers, Noise figure, Noise measurement, Charge carrier density, Communication system control, Optical fiber communicationSubject (TCD):
Nanoscience & Materials , Smart & Sustainable PlanetDOI:
http://dx.doi.org/10.1109/ICTON.2009.5185177Licences:
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