Tunneling magnetoresistance in Si nanowires
Citation:
Montes E, Rungger I, Sanvito S, Schwingenschlögl U, Tunneling magnetoresistance in Si nanowires, New Journal of Physics, 18, 11, 2016, 113024-Download Item:
Montes_2016_New_J._Phys._18_113024(1).pdf (PDF) 1.278Mb
Abstract:
We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires
attached to ferromagnetic Fe electrodes, using
fi
rst principles density functional theory combined
with the non-equilibrium Green
’
s functions method for quantum transport. Silicon nanowires
represent an interesting platform for spin devices. They are compatible with mature silicon technology
and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here
we systematically study the spin transport properties for neutral nanowires and both
n
and
p
doping
conditions. We
fi
nd a substantial low bias magnetoresistance for the neutral case, which halves for an
applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the
magnetoresistance, as soon as the conductance is no longer dominated by tunneling.
Sponsor
Grant Number
Science Foundation Ireland (SFI)
14 / IA / 2624
Author's Homepage:
http://people.tcd.ie/sanvitosDescription:
PUBLISHEDExport Date: 5 January 2017
Author: SANVITO, STEFANO
Type of material:
Journal ArticleCollections:
Series/Report no:
New Journal of Physics18
11
Availability:
Full text availableKeywords:
semiconducting Si nanowiresDOI:
http://dx.doi.org/10.1088/1367-2630/18/11/113024Licences: