Conducting mechanism in the epitaxial p-type transparent conducting oxide Cr2O3:Mg
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Journal ArticleDate:
2015Access:
openAccessCitation:
L. Farrell,* K. Fleischer, D. Caffrey, D. Mullarkey, E. Norton, and I. V. Shvetsorton, and I. V. Shvets, Conducting mechanism in the epitaxial p-type transparent conducting oxide Cr2O3:Mg, PHYSICAL REVIEW B, 91, 2015, 005200-1 - 005200-10Download Item:
PhysRevB.91.125202.pdf (PDF) 1.407Mb
Abstract:
Epitaxial
p
-type transparent conducting oxide (TCO) Cr
2
O
3
:Mg was grown by electron-beam evaporation in a
molecular beam epitaxy system on
c
-plane sapphire. The influence of Mg dopants and the oxygen partial pressure
were investigated by thermoelectric and electrical measurements. The conduction mechanism is analyzed using
the small-polaron hopping model, and hopping activation energies have been determined, which vary with doping
concentration in the range of 210–300
±
5 meV. Films with better conductivity were obtained by postannealing.
The effect of postannealing is discussed in terms of a crystallographic reordering of the Mg dopant. The
highest Seebeck mobilities obtained from thermoelectric measurements are of the order of 10
−
4
cm
2
V
−
1
s
−
1
.We
investigate the fundamental properties of a Mg dopant in a high crystalline quality epitaxial film of a binary
oxide, helping us understand the role of short range crystallographic order in a
p
-type TCO in detail.
Sponsor
Grant Number
Higher Education Authority (HEA)
PRTLI scheme, Cycle 5
Science Foundation Ireland (SFI)
12/IA/1264
Irish Research Council (IRC)
Author's Homepage:
http://people.tcd.ie/ivchvetshttp://people.tcd.ie/fleisck
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PUBLISHEDType of material:
Journal ArticleCollections:
Series/Report no:
PHYSICAL REVIEW B91
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Full text availableKeywords:
sapphireSubject (TCD):
Nanoscience & Materials , Applied physics , FILMS , Nanotechnology , Nanotubes , Physics , Surface and interface physicsDOI:
http://dx.doi.org/10.1103/PhysRevB.91.125202Licences: