Perpendicular exchange bias effect in sputter-deposited CoFe/IrMn bilayers
Citation:
Chen, J.Y., Thiyagarajah, N., Xu, H.J., Coey, J.M.D., Perpendicular exchange bias effect in sputter-deposited CoFe/IrMn bilayers, Applied Physics Letters, 104, 15, 2014, 152405-Download Item:
1.4871711.pdf (PDF) 3.262Mb
Abstract:
CoFe/IrMn bilayers with perpendicular magneti
zation for various IrMn layer thicknesses exhibit
unusual two-step hysteresis loops with both posi
tive and negative loop shifts. Observed at room
temperature in the as-grown state, they provide
direct evidence of large antiferromagnetic
domain formation at the IrMn interface. The e
xchange bias field reaches 100mT with an IrMn
layer thickness of 4nm after field annealing at 200
C–300
C in 800mT, which is at least three
times as large as the coercivity, and may be useful for reference layers of spin-valves or magnetic
tunnel junctions with perpendi
cular magnetic anisotropy.
Sponsor
Grant Number
Science Foundation Ireland (SFI)
(NISE) Project 10/IN1/I3006
Author's Homepage:
http://people.tcd.ie/jcoeyDescription:
PUBLISHED
Author: COEY, JOHN
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Journal ArticleCollections:
Series/Report no:
Applied Physics Letters104
15
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Full text availableKeywords:
CoFe/IrMn bilayersDOI:
http://dx.doi.org/10.1063/1.4871711Licences: