Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions
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2009Access:
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I. Rungger, O. Mryasov, and S. Sanvito, Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions, Physical Review B, 79, 2009, 094414Download Item:
PhysRevB.79.094414.pdf (Published (publisher's copy)) 438.2Kb
Abstract:
The bias dependence of the tunnel magnetoresistance
TMR
of Fe/MgO/Fe tunnel junctions is investigated
theoretically with a fully self-consistent scheme that combines the nonequilibrium Green?s-function method
with density-functional theory. At voltages smaller than 20 mV the
I
-
V
characteristics and the TMR are
dominated by resonant transport through narrow interface states in the minority-spin band. In the parallel
configuration this contribution is quenched by a voltage comparable to the energy width of the interface state,
whereas it persists at all voltages in the antiparallel configuration. At higher bias the transport is mainly
determined by the relative positions of the
1
band edges in the two Fe electrodes, which causes a decrease in
the TMR
Sponsor
Grant Number
Science Foundation Ireland (SFI)
07/IN.1/I945
Science Foundation Ireland (SFI)
07/RFP/PHYF235
Author's Homepage:
http://people.tcd.ie/sanvitosDescription:
PUBLISHED
Author: SANVITO, STEFANO; RUNGGER, IVAN
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Physical Review B79
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Nanoscience & MaterialsDOI:
http://dx.doi.org/10.1103/PhysRevB.79.094414Licences: