Tailoring magnetoresistance at the atomic level: An ab initio study
Citation:
Kun Tao, V.S. Stepanyuk, I. Rungger and S. Sanvito, Tailoring magnetoresistance at the atomic level: An ab initio study, Physical Review B, 85, 4, 2012, 045406-Download Item:
PhysRevB.85.045406.pdf (Published (publisher's copy) - Peer Reviewed) 974.8Kb
Abstract:
The possibility of manipulating the tunneling magnetoresistance (TMR) of antiferromagnetic nanostructures is predicted in the framework of ab initio calculations. By the example of a junction composed of an antiferromagnetic dimer and a spin-polarized scanning tunneling microscopy tip we show that the TMR can be tuned and even reversed in sign by lateral and vertical movements of the tip. Moreover, our finite-bias calculations demonstrate that the magnitude and the sign of the TMR can also be tuned by an external voltage.
Sponsor
Grant Number
Science Foundation Ireland (SFI)
G20267
Author's Homepage:
http://people.tcd.ie/sanvitosDescription:
PUBLISHED
Author: SANVITO, STEFANO; RUNGGER, IVAN
Type of material:
Journal ArticleCollections:
Series/Report no:
Physical Review B85
4
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Full text availableKeywords:
finite-bias calculationsSubject (TCD):
Nanoscience & MaterialsDOI:
http://dx.doi.org/10.1103/PhysRevB.85.045406Licences: