Growth and characterization of epitaxial Ti3GeC2 thin films on 4 H-SiC(0 0 0 1)
Citation:
K. Buchholt, P. Eklund, J. Jensen, J. Lu, R. Ghandi, M. Domeij, C.M. Zetterling, G. Behan, H. Zhang, A. Lloyd Spetz, L. Hultman, Growth and characterization of epitaxial Ti3GeC2 thin films on 4 H-SiC(0 0 0 1), Journal of Crystal Growth, 343, 1, 2012, 133 137Abstract:
Epitaxial Ti3GeC2 thin films were deposited on 4? off-cut 4 H-SiC(0 0 0 1) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {1 1 2? 0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.
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http://people.tcd.ie/hozhangDescription:
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Author: ZHANG, HONGZHOU
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Journal of Crystal Growth343
1
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