Strain relaxation studies of the Fe3O4/MgO (100) heteroepitaxial system grown by magnetron sputtering
Citation:Balakrishnan, K.; Arora, S. K.; Shvets, I. V., Strain relaxation studies of the Fe3O4/MgO (100) heteroepitaxial system grown by magnetron sputtering, Journal of Physics: Condensed Matter, 16, 30, 2004, 5387-5393
Strain relaxation studies in Fe3O4-MgO (100) hetero-epitaxial systems grown by magnetron sputtering.pdf (Published (author's copy) - Peer Reviewed) 98.79Kb
Detailed strain relaxation studies of epitaxial magnetite, Be3O4, films on MgO(100) substrates grown by magnetron sputtering reveal the accommodation of strain up to 600 nm thickness, a thickness far above the critical thickness (t(C)) predicted by theoretical models. The results are in agreement with the suggestion that the excess strain in Fe3O4/MgO(100) heteroepitaxy is accommodated by the presence of antiphase boundaries. The compressive strain generated by the antiphase boundaries compensates for the tensile strain within the growth islands, allowing the film to remain fully coherent with the substrate. Contrary to earlier findings, magnetization decreases with an increase in the film thickness. This vindicates the view that the structure of the antiphase boundaries depends on the growth conditions.
Science Foundation Ireland (SFI)
Type of material:Journal Article
Series/Report no:Journal of Physics: Condensed Matter
Availability:Full text available