Surface morphology of c-plane sapphire (á-alumina) produced by high temperature anneal
Citation:Cuccureddu, F., Murphy, S., Shvets, I.V., Porcu, M., Zandbergen, H.W., Sidorov, N.S., Bozhko, S.I., Surface morphology of c-plane sapphire (á-alumina) produced by high temperature anneal , Surface Science, 604, 15-16, 2010, 1294-1299
Surface morphology of c-plane sapphire ?-alumina produced by high temperature anneal.pdf (Published (author's copy) - Peer Reviewed) 857.2Kb
A comparative study of the morphological surface evolution of c-plane (0001) alpha-Al2O3 upon annealing was investigated for non-miscut (i.e. substrates with 0 degrees nominal miscut) and vicinal substrates. The samples were annealed in air at 1100 degrees C for different durations of time. Although non-miscut samples do not show any step bunching at this temperature, miscut substrates show a regular and ordered stepped morphology with clearly defined terraces as revealed by Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) image analysis. The surface morphology presents a number of coalescence points, i.e. locations where two steps merge and form a multiple step. Close to the coalescence points, parallel steps change direction to different low index direction.
Science Foundation Ireland (SFI)
Type of material:Journal Article
Series/Report no:Surface Science
Availability:Full text available