Spin-polarized electron tunneling across magnetic dielectric
Citation:
Shvets, I. V.; Grigorenko, A. N.; Novoselov, K. S.; Mapps, D. J., Spin-polarized electron tunneling across magnetic dielectric, Applied Physics Letters, 86, 21, 2005, 212501Download Item:
Spin-polarized.pdf (Published (publisher's copy) - Peer Reviewed) 137.5Kb
Abstract:
This letter deals with a magnetic tunnel junction having spin filtering by a magnetic barrier. We
performed experiments in which a relatively strong external field rotates magnetizations of both
ferromagnetic electrodes in the tunnel junction with the magnetic barrier simultaneously so that the
two are always parallel to each other. The tunnel magnetoresistance induced in this way was over
16% at 300 K. The angular dependency of the tunnel current on the layer magnetizations indicates
that the barrier contains antiferromagnetic oxide. To achieve the described effect the magnetic
electrode of the junction was oxidized prior to forming the Al2O3 layer.
Sponsor
Grant Number
Science Foundation Ireland (SFI)
Author's Homepage:
http://people.tcd.ie/ivchvetsDescription:
PUBLISHED
Author: SHVETS, IGOR
Type of material:
Journal ArticleCollections:
Series/Report no:
Applied Physics Letters86
21
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Full text availableKeywords:
Particles and fields physics, magnetoresistanceLicences: