Low V? high-speed GaAs travelling-wave electrooptic phase modulators using an n-i-p-n structure
Item Type:Conference Paper
Citation:Lu, Q., Guo, W., Byrne, D., Donegan, J.F., Low V? high-speed GaAs travelling-wave electrooptic phase modulators using an n-i-p-n structure, , European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference (CLEO Europe - EQEC 2009), Munich, 14 June, IEEE, 2009, 5194744
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In this paper, we report a new design for GaAs modulators based on an n-i-p-n structure. The travelling-wave coplanar waveguide (CPW) electrodes are employed to realize high speed operation. By optimization, an electrical 3-dB bandwidth of nearly 40 GHz (optical 3-dB bandwidth of 80GHz) and a Vpi around 6.6 V are predicted for a 5 mm long phase modulator.
Author: DONEGAN, JOHN FRANCIS
Type of material:Conference Paper
Availability:Full text available