Device design of 1.3?m AlGaInAs-InP narrow strip structure for self-pulsation operation
Item Type:Conference Paper
Citation:Wu, Guan Hong; O'Brien, Canice G.; Seo, Woon-Ho; Donegan, John F., Device design of 1.3?m AlGaInAs-InP narrow strip structure for self-pulsation operation, Proceedings of SPIE, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks , Dublin, 04 April, edited by John G. McInerney, Gerard Farrell, David M. Denieffe, Liam P. Barry, Harold S. Gamble, Padraig J. Hughes, Alan Moore , 5825, SPIE, 2005, pp203 - 213
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A complete design of 1.3 ?m AlGaInAs/InP narrow stripe semiconductor lasers for self-pulsating operation is realised by using a 2?1D simulation model. This numerical model is based on the effective index method and self-sustained pulsation mechanism in the narrow stripe lasers. The self-pulsation effect is enhanced by the self focusing and defocusing of the optical field which is dependent on the modification of carrier densities in the active region. The resulting AlGaInAs-InP device with compressively strained multi-QWs showed self-pulsation frequency of 3.5 GHz.
Author: DONEGAN, JOHN FRANCIS
Type of material:Conference Paper
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