Design of Low V-pi High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure
Citation:
Qiaoyin Lu Weihua Guo Byrne, D. Donegan, J.F. , Design of Low V-pi High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure, IEEE Photonics Technology Letters, 20, 21, 2008, 1805-1807Download Item:
Design of Low.pdf (published (publisher copy) peer-reviewed) 402.1Kb
Abstract:
GaAs-based electrooptic phase modulators using
an n-i-p-n structure and coplanar waveguide traveling-wave
electrodes are designed using the compact 2-D finite-difference
time-domain technique and Pade approximation transform. By
optimization, an electrical 3-dB bandwidth of 40 GHz and a 6.6-V
are predicted for a 5-mm-long modulator.
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http://people.tcd.ie/jdoneganDescription:
PUBLISHED
Author: DONEGAN, JOHN
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IEEE Photonics Technology Letters20
21
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http://dx.doi.org/10.1109/LPT.2008.2005009Licences: