Design of Low V-pi High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure
Item Type:Journal Article
Citation:Qiaoyin Lu Weihua Guo Byrne, D. Donegan, J.F. , Design of Low V-pi High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure, IEEE Photonics Technology Letters, 20, 21, 2008, 1805-1807
Design of Low.pdf (published (publisher copy) peer-reviewed) 402.1Kb
GaAs-based electrooptic phase modulators using an n-i-p-n structure and coplanar waveguide traveling-wave electrodes are designed using the compact 2-D finite-difference time-domain technique and Pade approximation transform. By optimization, an electrical 3-dB bandwidth of 40 GHz and a 6.6-V are predicted for a 5-mm-long modulator.
Author: DONEGAN, JOHN
Type of material:Journal Article
Series/Report no:IEEE Photonics Technology Letters
Availability:Full text available
Keywords:Electrooptic modulator, Pade approximation transform, 2-D finite-difference time-domain (FDTD) method, traveling-wave (TW) electrodes.