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dc.contributor.authorFENG, GEN
dc.contributor.authorVAN DIJKEN, SEBASTIAN
dc.contributor.authorCOEY, JOHN MICHAEL DAVID
dc.date.accessioned2009-08-20T16:57:11Z
dc.date.available2009-08-20T16:57:11Z
dc.date.issued2006
dc.date.submitted2006en
dc.identifier.citationG Feng, S van Dijken and J.M.D. Coey 'Influence of annealing on the bias voltage dependence of tunnelling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes' in Applied Physics Letters, 89, (16), 2006, 162501en
dc.identifier.otherYen
dc.identifier.otherY
dc.identifier.urihttp://hdl.handle.net/2262/31890
dc.descriptionPUBLISHEDen
dc.description.abstractDouble-barrier magnetic tunnel junctions with two MgO barriers and three CoFeB layers exhibiting tunneling magnetoresistance (TMR) values of more than 100% were fabricated. The bias voltage dependence of the TMR ratio is highly asymmetric after annealing at low temperatures, indicating dissimilar CoFeB/MgO interfaces. The TMR effect decays very slowly for positive bias and is only reduced to half of its maximum value at V1/2 = 1.88?V when the junctions are processed at 200??C. The largest output voltage, 0.62?V, is obtained after annealing at 300??C, a temperature that combines high TMR ratios with a considerable asymmetric bias dependence.en
dc.description.sponsorshipThis work was supported by Science Foundation Ireland.en
dc.format.extent162501en
dc.format.extent323127 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseries89en
dc.relation.ispartofseries16en
dc.rightsYen
dc.subjectPhysicsen
dc.titleInfluence of annealing on the bias voltage dependence of tunnelling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodesen
dc.contributor.sponsorScience Foundation Ireland
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jcoey
dc.identifier.rssinternalid60516
dc.identifier.rssurihttp://dx.doi.org/10.1063/1.2362977


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