Two-photon absorption photocurrent enhancement in bulk AlGaAs semiconductor microcavities
Citation:Folliot, H. and Lynch, M. and Bradley, A. L. and Dunbar, L. A. and Donegan, J. F. and Barry, L. P. and Roberts, J. S. and Hill, G., Two-photon absorption photocurrent enhancement in bulk AlGaAs semiconductor microcavities, Applied Physics Letters, 80, 2002, 1328-1330
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We report on two-photon absorption ~TPA! photocurrent in semiconductor microcavities. We experimentally show a substantial increase in the TPA photocurrent generated, at resonance, in a GaAlAs/GaAs microcavity designed for TPA operation at ;890 nm. An enhancement factor of ;12 000 of the photocurrent is obtained via the microcavity effect, which could have an important impact on the use of TPA devices for high speed switching and sampling applications. Our results also show the implications of the cavity photon lifetime on autocorrelation traces measured using TPA in semiconductor microcavities
This paper was selected for inclusion in the Virtual Journal of Nanoscale Science and Technology 5, 9 (2002).
Type of material:Journal Article
Series/Report no:Applied Physics Letters
Availability:Full text available