High-Mobility Flexible Transistors with Low-Temperature Solution-Processed Tungsten Dichalcogenides
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2023Access:
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Carey, T. and Cassidy, O. and Synnatschke, K. and Caffrey, E. and Garcia, J. and Liu, S. and Kaur, H. and Kelly, A.G. and Munuera, J. and Gabbett, C. and O???Suilleabhain, D. and Coleman, J.N., High-Mobility Flexible Transistors with Low-Temperature Solution-Processed Tungsten Dichalcogenides, ACS Nano, 17, 3, 2023, 2912-2922Download Item:
acsnano.2c11319.pdf (PDF) 9.479Mb
Abstract:
The investigation of high-mobility two-dimensional (2D) flakes beyond molybdenum disulfide (MoS2) will be necessary to create a library of high-mobility solution-processed networks that conform to substrates and remain functional over thousands of bending cycles. Here we report electrochemical exfoliation of large-aspect-ratio (>100) semiconducting flakes of tungsten diselenide (WSe2) and tungsten disulfide (WS2) as well as MoS2 as a comparison. We use Langmuir-Schaefer coating to achieve highly aligned and conformal flake networks, with minimal mesoporosity (∼2-5%), at low processing temperatures (120 °C) and without acid treatments. This allows us to fabricate electrochemical transistors in ambient air, achieving average mobilities of μMoS ≈ 11 cm2 V-1 s-1, μWS ≈ 9 cm2 V-1 s-1, and μWSe ≈ 2 cm2 V-1 s-1 with a current on/off ratios of Ion/Ioff ≈ 2.6 × 103, 3.4 × 103, and 4.2 × 104 for MoS2, WS2, and WSe2, respectively. Moreover, our transistors display threshold voltages near ∼0.4 V with subthreshold slopes as low as 182 mV/dec, which are essential factors in maintaining power efficiency and represent a 1 order of magnitude improvement in the state of the art. Furthermore, the performance of our WSe2 transistors is maintained on polyethylene terephthalate (PET) even after 1000 bending cycles at 1% strain.
Sponsor
Grant Number
Marie Curie
101030735
Author's Homepage:
http://people.tcd.ie/colemajhttp://people.tcd.ie/careyti
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PUBLISHEDcited By 0
Author: Coleman, Jonathan; Carey, Tian
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ACS Nano17
3
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Full text availableKeywords:
high-mobility two-dimensional (2D) flakes, molybdenum disulfide (MoS2), threshold voltages, Langmuir−Schaefer deposition, Transistors, Electrochemical exfoliation, Tungsten dichalcogenides, Solution processingSubject (TCD):
Nanoscience & MaterialsDOI:
http://dx.doi.org/10.1021/acsnano.2c11319http://dx.doi.org/10.1021/acsnano.2c11319
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