• Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry

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    Date

    2012

    Authors

    CROSS, GRAHAM
    DUESBERG, GEORG
    SHVETS, IGOR
    WU, HAN-CHUN

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    Liao, Z.-M., Wu, H.-C., Kumar, S., Duesberg, G.S., Zhou, Y.-B., Cross, G.L.W., Shvets, I.V., Yu, D.-P., Large magnetoresistance in few layer graphene stacks with current perpendicular to plane geometry, Advanced Materials, 24, 14, 2012, 1862-1866

    Abstract

    Large magnetoresistance (MR) effect of few layers graphene between two non-magnetic metal electrodes with current perpendicular to graphene plane was studied. A non-saturation and anisotropic MR with the value over 60% at 14 T was observed in a two-layer graphene stack at room temperature. The resistance of the device is only tens of ohms, having the advantage of low power consumption for magnetic device applications.

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    PUBLISHED

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    http://hdl.handle.net/2262/67641

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    Physics (Scholarly Publications)
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    Sponsor: Science Foundation Ireland (SFI)
    Grant Number: 08/CE/I

    Sponsor: Science Foundation Ireland (SFI)
    Grant Number: 06/IN.1/I91

    Sponsor: Science Foundation Ireland (SFI)
    Grant Number: 008/IN.1/I1932

    Author's Homepage: http://people.tcd.ie/crossg

    Author: CROSS, GRAHAM

    Author: DUESBERG, GEORG

    Author: SHVETS, IGOR

    Author: WU, HAN-CHUN

    Type of material: Journal Article