• 1/f noise in MgO double-barrier magnetic tunnel junctions

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    2011

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    Yu, GQ, Diao, Z, Feng, JF, Kurt, H, Han, XF, Coey, JMD, 1/f noise in MgO double-barrier magnetic tunnel junctions, Applied Physics Letters, 98, 2011, 112504-

    Abstract

    Low frequency noise has been investigated in MgO double-barrier magnetic tunnel junctions (DMTJs) with tunneling magnetoresistance (TMR) ratios up to 250% at room temperature. The noise shows a 1/f frequency spectrum and the minimum of the noise magnitude parameter is 1.2 x 10(-10) mu m(2) in the parallel state for DMTJs annealed at 375 degrees C. The bias dependence of noise and TMR suggests that DMTJs with MgO barriers can be useful for magnetic field sensor applications.

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    http://hdl.handle.net/2262/54964

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    Physics (Scholarly Publications)
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    Keywords

    Atomic, molecular and chemical physics, MAGNETORESISTANCE

    Sponsor: Science Foundation Ireland
    Grant Number: 2005/IN/1850

    Sponsor: Higher Education Authority

    Author's Homepage: http://people.tcd.ie/jcoey

    Author: COEY, JOHN MICHAEL DAVID

    Type of material: Journal Article