Contact-resistivity and transport properties in lateral germanium nanowire devices

Abstract

Quasi-one-dimensional materials, such as germanium nanowires, are anticipated to provide enhanced functionality for high-tech electronic and spin- tronic device components. The primary aim of this thesis is to study the contact-resistivity and transport effects effects associated with the quasi-one- dimensional confinement and doping in lateral side-contacted Ge nanowire devices by electrical probing. In addition, a case study is carried out on Ag (metallic) nanowires in order to distinguish universal nanoscale contact- and transport-effects.