Impact of bias current distribution on the noise figure and power saturation of a multicontact semiconductor optical amplifier

Abstract

We present an experimental investigation of a multicontact semiconductor optical amplifier. This first-generation device allows for direct control of the carrier density profile along the length of the waveguide. This is used to control the device noise figure, with a minimum value of 5 dB observed at a gain of 15 dB for an optimum carrier density profile. The opposite carrier density profile results in an increase of the power saturation by 3 dB.