Field-effect transistor made of individual V2O5 nanofibers

Abstract

A field-effect transistor (FET) with a channel length of ~ 100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5nm?10nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to increase from 7.7?10-5 cm2/V s at T= 131 K to 9.6?10-3 cm2/V s at T=192 K with an activation energy of Ea=0.18eV. The nonohmic current/voltage dependence at high electric fields was analyzed in the frame of small polaron hopping conduction, yielding a nearest-neighbor hopping distance of ~ 4 nm.