Electrical Properties of High-k Ta205 Gate Dielectrics on Strained Ge-rich Layers

PEROVA, TANIA; MOORE, ALAN

Electrical Properties of High-k Ta205 Gate Dielectrics on Strained Ge-rich Layers

Files

Electrical.pdf (229.01 KB)

Date

2004

Authors

PEROVA, TANIA

MOORE, ALAN

Publisher

IEEE

Citation

S. Chakraborty, S.K. Samanta, S. Bhattacharya, J. McCarthy, B.M. Armstrong, H.S. Gamble, G.K. Dalapati, S. Das, T. Perova, R.A. Moore and C.K. Maiti `Electrical Properties of High-k Ta205 Gate Dielectrics on Strained Ge-rich Layers? in proceedings of the IEEE 24th International Conference on Microelectronics (MIEL-2004), NIS, Serbia and Montenegro, 16-19 May, 24, (2), 2004, pp 405 - 407

Abstract

The electrical properties of ultrathin high-k Zr02 gate dielectric films dcposited on strained Gc-rich layers using microwave plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature (150'C) have been studied. The strained Ge-rich heterolaycrs have been analyzed by transmission elcctron microscopy (TEM) and Raman spectra. X-ray photoclectron spectroscopy (XPS) has been used for analysis of chemical compositions of the deposited 2102 films. The fixed oxide charge density (Qdq) and interface state density (D;,) are found to be 4.8 x 10" cm~ 2an d 5 . 1 ~ 1 0 e' ~V -'mi2, respectively. The capacitance-voltage (C-V) characteristics and current-voltage (I-V) characteristics before and after constant current stressing exhibit good electrical properties and thus indicate the suitability of these films for future microelectronic applications.