• Broad band infrared spectroscopy of grooved silicon

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    Date

    2005

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    SPIE

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    E. Y. Krutkova, V. Y. Timoshenko, L. A. Golovan, P. K. Kashkarov, E. V. Astrova, T. S. Perova, B. P. Gorshunov, and A. A. Volkov, Broad band infrared spectroscopy of grooved silicon, Proceedings of SPIE, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks, Dublin, Ireland, Monday 04 April 2005, John G. McInerney, Gerard Farrell, David M. Denieffe, Liam P. Barry, Harold S. Gamble, Padraig J. Hughes, Alan Moore, 5825, SPIE, 2005, 670 - 677

    Abstract

    Grooved silicon (gr-Si) structures with a period of few micrometers, which were formed by anisotropic etching of (110) Si wafers, have been investigated by means of broad band infrared (IR) and submillimeter transmission spectroscopy. In the spectral region of 50-1000 ?m the results are well explained by an effective medium model, which predicts a strong birefringence with a difference between refractive indices for ordinary and extraordinary beams to be about 0.73-0.77. The IR transmission of gr-Si in the range from 1 to 30 ?m is strongly influenced by light scattering. The experimental results measured in the region 1-5 ?m can be understood in the terms of the geometric optics.

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    Dublin, Ireland

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    http://hdl.handle.net/2262/36827

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    Electronic & Electrical Eng (Scholarly Publications)
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    Keywords

    IR spectroscopy, anisotropic silicon structure, effective medium model

    Sponsor: Science Foundation Ireland (SFI)

    Author's Homepage: http://people.tcd.ie/perovat

    Author: PEROVA, TANIA

    Other Titles: Proceedings of SPIE
    Publisher: SPIE
    Type of material: Poster