Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes

Donegan, John; Bradley, Louise

doi:http://dx.doi.org/10.1049/el.2010.3090

Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes

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Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes.pdf (139.95 KB)

Date

2010

Authors

Donegan, John

Bradley, Louise

Citation

O'Dowd, J, Guo, WH, Lynch, M, Flood, E, Bradley, AL, Donegan, JF, Description of polarisation dependence of two-photon absorption in silicon avalanche photodiodes, ELECTRONICS LETTERS, 46, 12, 2010, 854 - 856

Abstract

A simple formula is obtained that very accurately describes the level of two-photon absorption (TPA) generated by elliptically polarised light in silicon avalanche photodiodes (Si-APDs). The dichroism parameter necessary to describe the polarisation dependence of TPA in Si-APDs at room temperature is determined to be +0.372 in the region of 1550 nm.