Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well

DONEGAN, JOHN FRANCIS; MC CABE, EITHNE MARY; HEGARTY, JOHN

Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well

Files

Optical.pdf (65.24 KB)

Date

1997

Authors

DONEGAN, JOHN FRANCIS

MC CABE, EITHNE MARY

HEGARTY, JOHN

Publisher

American Institute of Physics

Citation

Logue, F. P.; Fewer, D. T.; Hewlett, S. J.; Heffernan, J. F.; Jordan, C.; Rees, P.; Donegan, J. F.; McCabe, E. M.; Hegarty, J.; Taniguchi, S.; Hino, T.; Nakano, K.; Ishibashi, A., Optical measurement of the ambipolar diffusion length in a ZnCdSe-ZnSe single quantum well, Journal of Appleid Physics, 81, (1), 1997, p536 - 538

Abstract

We describe a straightforward technique for the measurement of carrier diffusion in semiconductors. Using an optical microscope we can spatially image luminescence with a resolution of ~ 500 nm. We measured the ambipolar diffusion length in a Zn0.75Cd0.25Se?ZnSe single quantum well by fitting the spatially resolved luminescence profile with the solution of the two-dimensional diffusion equation. The ambipolar diffusion length was found to be 498 nm at a carrier density of ~ 1 ? 1018 cm ? 3 and we deduce an ambipolar diffusion constant of 1.7 cm2 s ? 1.