Design of Low V-pi High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure

DONEGAN, JOHN

doi:http://dx.doi.org/10.1109/LPT.2008.2005009

Design of Low V-pi High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure

Files

Design of Low.pdf (402.13 KB)

Date

2008

Authors

DONEGAN, JOHN

Citation

Qiaoyin Lu Weihua Guo Byrne, D. Donegan, J.F. , Design of Low V-pi High-Speed GaAs Travelling-Wave Electrooptic Phase Modulators Using an n-i-p-n Structure, IEEE Photonics Technology Letters, 20, 21, 2008, 1805-1807

Abstract

GaAs-based electrooptic phase modulators using an n-i-p-n structure and coplanar waveguide traveling-wave electrodes are designed using the compact 2-D finite-difference time-domain technique and Pade approximation transform. By optimization, an electrical 3-dB bandwidth of 40 GHz and a 6.6-V are predicted for a 5-mm-long modulator.